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Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. Large lattice mismatch Ge/Si multilayers were intentionally grown as the starting material rather than Ge/GeSi multilayers to acquire the benefits of the considerable difference i...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8770505/ https://www.ncbi.nlm.nih.gov/pubmed/35046452 http://dx.doi.org/10.1038/s41598-021-04514-y |