Temperature Dependence of Ultrathin Mixed-Phase Ga(2)O(3) Films Grown on the α-Al(2)O(3) Substrate via Mist-CVD

[Image: see text] Alpha (α)- and beta (β)-phase gallium oxide (Ga(2)O(3)), emerging as ultrawide-band gap semiconductors, have been paid a great deal of attention in optoelectronics and high-performance power semiconductor devices owing to their ultrawide band gap ranging from 4.4 to 5.3 eV. The hot...

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Detalles Bibliográficos
Autores principales: Mondal, Abhay Kumar, Ping, Loh Kean, Shazni Mohammad Haniff, Muhammad Aniq, Mohd Sarjidan, Mohd Arif, Goh, Boon Tong, Mohamed, Mohd Ambri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8771688/
https://www.ncbi.nlm.nih.gov/pubmed/35071914
http://dx.doi.org/10.1021/acsomega.1c05859

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8771688/
https://www.ncbi.nlm.nih.gov/pubmed/35071914
http://dx.doi.org/10.1021/acsomega.1c05859

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