Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride

[Image: see text] Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to...

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Detalles Bibliográficos
Autores principales: Guo, Nai-Jie, Liu, Wei, Li, Zhi-Peng, Yang, Yuan-Ze, Yu, Shang, Meng, Yu, Wang, Zhao-An, Zeng, Xiao-Dong, Yan, Fei-Fei, Li, Qiang, Wang, Jun-Feng, Xu, Jin-Shi, Wang, Yi-Tao, Tang, Jian-Shun, Li, Chuan-Feng, Guo, Guang-Can
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8771700/
https://www.ncbi.nlm.nih.gov/pubmed/35071868
http://dx.doi.org/10.1021/acsomega.1c04564

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8771700/
https://www.ncbi.nlm.nih.gov/pubmed/35071868
http://dx.doi.org/10.1021/acsomega.1c04564

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