An Ultrasensitive Silicon-Based Electrolyte-Gated Transistor for the Detection of Peanut Allergens

The highly sensitive detection of peanut allergens (PAs) using silicon-based electrolyte-gated transistors (Si-EGTs) was demonstrated. The Si-EGT was made using a top-down technique. The fabricated Si-EGT showed excellent intrinsic electrical characteristics, including a low threshold voltage of 0.7...

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Detalles Bibliográficos
Autores principales: Kim, Donghoon, Jin, Bo, Kim, Sol-A, Choi, Wonyeong, Shin, Seonghwan, Park, Jiwon, Shim, Won-Bo, Kim, Kihyun, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8773534/
https://www.ncbi.nlm.nih.gov/pubmed/35049652
http://dx.doi.org/10.3390/bios12010024

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8773534/
https://www.ncbi.nlm.nih.gov/pubmed/35049652
http://dx.doi.org/10.3390/bios12010024

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