Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (abou...

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Detalles Bibliográficos
Autores principales: Li, Yiming, Chuang, Min-Hui, Tsai, Yu-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777516/
https://www.ncbi.nlm.nih.gov/pubmed/35061127
http://dx.doi.org/10.1186/s11671-022-03657-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777516/
https://www.ncbi.nlm.nih.gov/pubmed/35061127
http://dx.doi.org/10.1186/s11671-022-03657-9

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