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Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer

In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (abou...

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Autores principales: Li, Yiming, Chuang, Min-Hui, Tsai, Yu-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777516/
https://www.ncbi.nlm.nih.gov/pubmed/35061127
http://dx.doi.org/10.1186/s11671-022-03657-9
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author Li, Yiming
Chuang, Min-Hui
Tsai, Yu-Chin
author_facet Li, Yiming
Chuang, Min-Hui
Tsai, Yu-Chin
author_sort Li, Yiming
collection PubMed
description In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (about 33% improvement) and the off-state current decreases (about 73% suppression) due to the NC effect. NC-GAA FinFETs have larger standard deviation of threshold voltage induced by the workfunction fluctuation (WKF) for both N-/P-type devices than those of GAA FinFETs. It is attributed to the variation of polarization in the different position of the ferroelectric layer. Notably, the inverter of NC-GAA FinFETs has larger noise margin and shorter delay time, compared with the inverter of GAA FinFETs; however, the characteristics of inverter of NC-GAA FinFETs suffer larger variability induced by the WKF.
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spelling pubmed-87775162022-02-02 Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer Li, Yiming Chuang, Min-Hui Tsai, Yu-Chin Nanoscale Res Lett Nano Express In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (about 33% improvement) and the off-state current decreases (about 73% suppression) due to the NC effect. NC-GAA FinFETs have larger standard deviation of threshold voltage induced by the workfunction fluctuation (WKF) for both N-/P-type devices than those of GAA FinFETs. It is attributed to the variation of polarization in the different position of the ferroelectric layer. Notably, the inverter of NC-GAA FinFETs has larger noise margin and shorter delay time, compared with the inverter of GAA FinFETs; however, the characteristics of inverter of NC-GAA FinFETs suffer larger variability induced by the WKF. Springer US 2022-01-21 /pmc/articles/PMC8777516/ /pubmed/35061127 http://dx.doi.org/10.1186/s11671-022-03657-9 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Li, Yiming
Chuang, Min-Hui
Tsai, Yu-Chin
Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title_full Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title_fullStr Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title_full_unstemmed Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title_short Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
title_sort effects of random nanosized tin grain on characteristic of gate-all-around finfets with ferroelectric hzo layer
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777516/
https://www.ncbi.nlm.nih.gov/pubmed/35061127
http://dx.doi.org/10.1186/s11671-022-03657-9
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