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Effects of Random Nanosized TiN Grain on Characteristic of Gate-All-Around FinFETs with Ferroelectric HZO Layer
In this paper, we computationally study electrical characteristics for gate-all-around fin field effect transistors (GAA FinFETs) and negative capacitance GAA FinFETs (NC-GAA FinFETs) for sub-3-nm technological nodes. For the devices with the fin height of 55 nm, the on-state current increases (abou...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777516/ https://www.ncbi.nlm.nih.gov/pubmed/35061127 http://dx.doi.org/10.1186/s11671-022-03657-9 |