A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide...

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Detalles Bibliográficos
Autores principales: Liu, Daoqun, Li, Tingting, Tang, Bo, Zhang, Peng, Wang, Wenwu, Liu, Manwen, Li, Zhihua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777623/
https://www.ncbi.nlm.nih.gov/pubmed/35056212
http://dx.doi.org/10.3390/mi13010047

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777623/
https://www.ncbi.nlm.nih.gov/pubmed/35056212
http://dx.doi.org/10.3390/mi13010047

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