A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage

Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide...

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Detalles Bibliográficos
Autores principales: Liu, Daoqun, Li, Tingting, Tang, Bo, Zhang, Peng, Wang, Wenwu, Liu, Manwen, Li, Zhihua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777623/
https://www.ncbi.nlm.nih.gov/pubmed/35056212
http://dx.doi.org/10.3390/mi13010047
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author Liu, Daoqun
Li, Tingting
Tang, Bo
Zhang, Peng
Wang, Wenwu
Liu, Manwen
Li, Zhihua
author_facet Liu, Daoqun
Li, Tingting
Tang, Bo
Zhang, Peng
Wang, Wenwu
Liu, Manwen
Li, Zhihua
author_sort Liu, Daoqun
collection PubMed
description Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection.
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spelling pubmed-87776232022-01-22 A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage Liu, Daoqun Li, Tingting Tang, Bo Zhang, Peng Wang, Wenwu Liu, Manwen Li, Zhihua Micromachines (Basel) Article Silicon avalanche photodetector (APD) plays a very important role in near-infrared light detection due to its linear controllable gain and attractive manufacturing cost. In this paper, a silicon APD with punch-through structure is designed and fabricated by standard 0.5 μm complementary metal oxide semiconductor (CMOS) technology. The proposed structure eliminates the requirements for wafer-thinning and the double-side metallization process by most commercial Si APD products. The fabricated device shows very low level dark current of several tens Picoamperes and ultra-high multiplication gain of ~4600 at near-infrared wavelength. The ultra-low extracted temperature coefficient of the breakdown voltage is 0.077 V/K. The high performance provides a promising solution for near-infrared weak light detection. MDPI 2021-12-29 /pmc/articles/PMC8777623/ /pubmed/35056212 http://dx.doi.org/10.3390/mi13010047 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Liu, Daoqun
Li, Tingting
Tang, Bo
Zhang, Peng
Wang, Wenwu
Liu, Manwen
Li, Zhihua
A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title_full A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title_fullStr A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title_full_unstemmed A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title_short A Near-Infrared CMOS Silicon Avalanche Photodetector with Ultra-Low Temperature Coefficient of Breakdown Voltage
title_sort near-infrared cmos silicon avalanche photodetector with ultra-low temperature coefficient of breakdown voltage
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8777623/
https://www.ncbi.nlm.nih.gov/pubmed/35056212
http://dx.doi.org/10.3390/mi13010047
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