Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates

We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO(2)/5 nm Ge-HfO(2) intermediate layer/8 nm tunnel HfO(2)/p-Si substrate. The intermediate layer is ferroelectric and acts as a floati...

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Detalles Bibliográficos
Autores principales: Dragoman, Mircea, Dinescu, Adrian, Dragoman, Daniela, Palade, Cătălin, Teodorescu, Valentin Şerban, Ciurea, Magdalena Lidia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778263/
https://www.ncbi.nlm.nih.gov/pubmed/35055296
http://dx.doi.org/10.3390/nano12020279

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778263/
https://www.ncbi.nlm.nih.gov/pubmed/35055296
http://dx.doi.org/10.3390/nano12020279

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