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Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates
We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO(2)/5 nm Ge-HfO(2) intermediate layer/8 nm tunnel HfO(2)/p-Si substrate. The intermediate layer is ferroelectric and acts as a floati...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778263/ https://www.ncbi.nlm.nih.gov/pubmed/35055296 http://dx.doi.org/10.3390/nano12020279 |