Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlG...

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Detalles Bibliográficos
Autores principales: Qin, Yingshuo, Chai, Changchun, Li, Fuxing, Liang, Qishuai, Wu, Han, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778421/
https://www.ncbi.nlm.nih.gov/pubmed/35056271
http://dx.doi.org/10.3390/mi13010106

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778421/
https://www.ncbi.nlm.nih.gov/pubmed/35056271
http://dx.doi.org/10.3390/mi13010106

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