Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm(3) high-pressure, high-temperature (001) di...

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Detalles Bibliográficos
Autores principales: Wang, Ruozheng, Lin, Fang, Niu, Gang, Su, Jianing, Yan, Xiuliang, Wei, Qiang, Wang, Wei, Wang, Kaiyue, Yu, Cui, Wang, Hong-Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778734/
https://www.ncbi.nlm.nih.gov/pubmed/35057162
http://dx.doi.org/10.3390/ma15020444

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778734/
https://www.ncbi.nlm.nih.gov/pubmed/35057162
http://dx.doi.org/10.3390/ma15020444

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