A Novel Bidirectional AlGaN/GaN ESD Protection Diode

Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs. Therefore, there is still an urgent need for a bidirectional ESD protection diode to improve the...

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Detalles Bibliográficos
Autores principales: Yao, Bin, Shi, Yijun, Wang, Hongyue, Xu, Xinbin, Chen, Yiqiang, He, Zhiyuan, Xiao, Qingzhong, Wang, Lei, Lu, Guoguang, Li, Hao, Huang, Yun, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778741/
https://www.ncbi.nlm.nih.gov/pubmed/35056300
http://dx.doi.org/10.3390/mi13010135

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778741/
https://www.ncbi.nlm.nih.gov/pubmed/35056300
http://dx.doi.org/10.3390/mi13010135

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