Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (V(TH)) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the V(TH) of...

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Detalles Bibliográficos
Autores principales: Wang, Shouyi, Zhou, Qi, Chen, Kuangli, Bai, Pengxiang, Wang, Jinghai, Zhu, Liyang, Zhou, Chunhua, Gao, Wei, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778785/
https://www.ncbi.nlm.nih.gov/pubmed/35057371
http://dx.doi.org/10.3390/ma15020654

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778785/
https://www.ncbi.nlm.nih.gov/pubmed/35057371
http://dx.doi.org/10.3390/ma15020654

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