Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range

In this work, novel hybrid gate Ultra-Thin-Barrier HEMTs (HG-UTB HEMTs) featuring a wide modulation range of threshold voltages (V(TH)) are proposed. The hybrid gate structure consists of a p-GaN gate part and a MIS-gate part. Due to the depletion effect assisted by the p-GaN gate part, the V(TH) of HG-UTB HEMTs can be significantly increased. By tailoring the hole concentration of the p-GaN gate, the V(TH) can be flexibly modulated from 1.63 V to 3.84 V. Moreover, the MIS-gate part enables the effective reduction in the electric field (E-field) peak at the drain-side edge of the p-GaN gate, which reduces the potential gate degradation originating from the high E-field in the p-GaN gate. Meanwhile, the HG-UTB HEMTs exhibit a maximum drain current as high as 701 mA/mm and correspond to an on-resistance of 10.1 Ω mm and a breakdown voltage of 610 V. The proposed HG-UTB HEMTs are a potential means to achieve normally off GaN HEMTs with a promising device performance and featuring a flexible V(TH) modulation range, which is of great interest for versatile power applications.