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Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions
The influence of microindentation on the electroluminescence of silicon carbide was studied in forward-biased 4H SiC p-i-n junctions. Four spectral regions at approximately 390, 420, 445 and 500 nm initially observed on virgin samples strongly depend, in regard to magnitude, on the condition of the...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779494/ https://www.ncbi.nlm.nih.gov/pubmed/35057255 http://dx.doi.org/10.3390/ma15020534 |