Improvement of Fermi-Level Pinning and Contact Resistivity in Ti/Ge Contact Using Carbon Implantation

Effects of carbon implantation (C-imp) on the contact characteristics of Ti/Ge contact were investigated. The C-imp into Ti/Ge system was developed to reduce severe Fermi-level pinning (FLP) and to improve the thermal stability of Ti/Ge contact. The current density (J)-voltage (V) characteristics sh...

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Detalles Bibliográficos
Autores principales: Park, Iksoo, Lee, Donghun, Jin, Bo, Kim, Jungsik, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779742/
https://www.ncbi.nlm.nih.gov/pubmed/35056273
http://dx.doi.org/10.3390/mi13010108

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8779742/
https://www.ncbi.nlm.nih.gov/pubmed/35056273
http://dx.doi.org/10.3390/mi13010108

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