Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions

In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench SiC MOSFETs, failure modes are gate failure at lower dc bu...

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Detalles Bibliográficos
Autores principales: Zou, Yuan, Wang, Jue, Xu, Hongyi, Wang, Hengyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780261/
https://www.ncbi.nlm.nih.gov/pubmed/35057316
http://dx.doi.org/10.3390/ma15020598

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780261/
https://www.ncbi.nlm.nih.gov/pubmed/35057316
http://dx.doi.org/10.3390/ma15020598

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