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Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions
In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench SiC MOSFETs, failure modes are gate failure at lower dc bu...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780261/ https://www.ncbi.nlm.nih.gov/pubmed/35057316 http://dx.doi.org/10.3390/ma15020598 |
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author | Zou, Yuan Wang, Jue Xu, Hongyi Wang, Hengyu |
author_facet | Zou, Yuan Wang, Jue Xu, Hongyi Wang, Hengyu |
author_sort | Zou, Yuan |
collection | PubMed |
description | In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench SiC MOSFETs, failure modes are gate failure at lower dc bus voltages and thermal runaway at higher dc bus voltages, while failure modes for asymmetric trench SiC MOSFETs are soft failure and thermal runaway, respectively. The shortcircuit withstanding time (SCWT) of the asymmetric trench MOSFET is higher than that of the double trench MOSFETs. The thermal and mechanical stresses inside the devices during the short-circuit tests have been simulated to probe into the failure mechanisms and reveal the impact of the device structures on the device reliability. Finally, post-failure analysis has been carried out to verify the root causes of the device failure. |
format | Online Article Text |
id | pubmed-8780261 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-87802612022-01-22 Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions Zou, Yuan Wang, Jue Xu, Hongyi Wang, Hengyu Materials (Basel) Article In this paper, the short-circuit robustness of 1200 V silicon carbide (SiC) trench MOSFETs with different gate structures has been investigated. The MOSFETs exhibited different failure modes under different DC bus voltages. For double trench SiC MOSFETs, failure modes are gate failure at lower dc bus voltages and thermal runaway at higher dc bus voltages, while failure modes for asymmetric trench SiC MOSFETs are soft failure and thermal runaway, respectively. The shortcircuit withstanding time (SCWT) of the asymmetric trench MOSFET is higher than that of the double trench MOSFETs. The thermal and mechanical stresses inside the devices during the short-circuit tests have been simulated to probe into the failure mechanisms and reveal the impact of the device structures on the device reliability. Finally, post-failure analysis has been carried out to verify the root causes of the device failure. MDPI 2022-01-13 /pmc/articles/PMC8780261/ /pubmed/35057316 http://dx.doi.org/10.3390/ma15020598 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zou, Yuan Wang, Jue Xu, Hongyi Wang, Hengyu Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title | Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title_full | Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title_fullStr | Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title_full_unstemmed | Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title_short | Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions |
title_sort | investigation of sic trench mosfets’ reliability under short-circuit conditions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780261/ https://www.ncbi.nlm.nih.gov/pubmed/35057316 http://dx.doi.org/10.3390/ma15020598 |
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