Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O(2) Mixed Plasma Treatment and Rapid Thermal Annealing

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the...

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Detalles Bibliográficos
Autores principales: Liu, Wei-Sheng, Hsu, Chih-Hao, Jiang, Yu, Lai, Yi-Chun, Kuo, Hsing-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780293/
https://www.ncbi.nlm.nih.gov/pubmed/35054574
http://dx.doi.org/10.3390/membranes12010049

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780293/
https://www.ncbi.nlm.nih.gov/pubmed/35054574
http://dx.doi.org/10.3390/membranes12010049

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