Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

The reliability instability of inhomogeneous Schottky contact behaviors of Ni/Au and Pt/Ti/Pt/Au gate contacts on AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated via off-state stress and temperature. Under the off-state stress condition, Pt/Ti/Pt/Au HEMT showed abruptly reduced...

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Detalles Bibliográficos
Autores principales: Chakraborty, Surajit, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780960/
https://www.ncbi.nlm.nih.gov/pubmed/35056249
http://dx.doi.org/10.3390/mi13010084

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8780960/
https://www.ncbi.nlm.nih.gov/pubmed/35056249
http://dx.doi.org/10.3390/mi13010084

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