Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study

The formation and diffusion of point defects have a detrimental impact on the functionality of devices in which a high quality AlN/GaN heterointerface is required. The present paper demonstrated the heights of the migration energy barriers of native point defects throughout the AlN/GaN heterointerfa...

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Detalles Bibliográficos
Autores principales: Hrytsak, Roman, Kempisty, Pawel, Grzanka, Ewa, Leszczynski, Michal, Sznajder, Malgorzata
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781020/
https://www.ncbi.nlm.nih.gov/pubmed/35057196
http://dx.doi.org/10.3390/ma15020478

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781020/
https://www.ncbi.nlm.nih.gov/pubmed/35057196
http://dx.doi.org/10.3390/ma15020478

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