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Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study
The formation and diffusion of point defects have a detrimental impact on the functionality of devices in which a high quality AlN/GaN heterointerface is required. The present paper demonstrated the heights of the migration energy barriers of native point defects throughout the AlN/GaN heterointerfa...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781020/ https://www.ncbi.nlm.nih.gov/pubmed/35057196 http://dx.doi.org/10.3390/ma15020478 |