Thickness Impact on the Morphology, Strain Relaxation and Defects of Diamond Heteroepitaxially Grown on Ir/Al(2)O(3) Substrates

This paper investigates the formation and propagation of defects in the heteroepitaxial growth of single-crystal diamond with a thick film achieving 500 µm on Ir (001)/Al(2)O(3) substrate. The growth of diamond follows the Volmer–Weber mode, i.e., initially shows the islands and subsequently coalesc...

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Detalles Bibliográficos
Autores principales: Wang, Ruozheng, Lin, Fang, Wei, Qiang, Niu, Gang, Wang, Hong-Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781078/
https://www.ncbi.nlm.nih.gov/pubmed/35057343
http://dx.doi.org/10.3390/ma15020624

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781078/
https://www.ncbi.nlm.nih.gov/pubmed/35057343
http://dx.doi.org/10.3390/ma15020624

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