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Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network
Breakdown voltage (BV), on-state voltage (V(on)), static latch-up voltage (V(lu)), static latch-up current density (J(lu)), and threshold voltage (V(th)), etc., are critical static characteristic parameters of an IGBT for researchers. V(on) and V(th) can characterize the conduction capability of the...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781125/ https://www.ncbi.nlm.nih.gov/pubmed/35056169 http://dx.doi.org/10.3390/mi13010004 |