Prediction of Static Characteristic Parameters of an Insulated Gate Bipolar Transistor Using Artificial Neural Network

Breakdown voltage (BV), on-state voltage (V(on)), static latch-up voltage (V(lu)), static latch-up current density (J(lu)), and threshold voltage (V(th)), etc., are critical static characteristic parameters of an IGBT for researchers. V(on) and V(th) can characterize the conduction capability of the...

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Detalles Bibliográficos
Autores principales: Yao, Qing, Guo, Yufeng, Zhang, Bo, Chen, Jing, Zhang, Jun, Zhang, Maolin, Guo, Xiaobo, Yao, Jiafei, Tang, Weihua, Liu, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781125/
https://www.ncbi.nlm.nih.gov/pubmed/35056169
http://dx.doi.org/10.3390/mi13010004

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