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Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the...

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Detalles Bibliográficos
Autores principales: Ryndin, Eugeny, Andreeva, Natalia, Luchinin, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781656/
https://www.ncbi.nlm.nih.gov/pubmed/35056262
http://dx.doi.org/10.3390/mi13010098