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Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors

The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the...

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Detalles Bibliográficos
Autores principales: Ryndin, Eugeny, Andreeva, Natalia, Luchinin, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781656/
https://www.ncbi.nlm.nih.gov/pubmed/35056262
http://dx.doi.org/10.3390/mi13010098
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author Ryndin, Eugeny
Andreeva, Natalia
Luchinin, Victor
author_facet Ryndin, Eugeny
Andreeva, Natalia
Luchinin, Victor
author_sort Ryndin, Eugeny
collection PubMed
description The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiO(x) films (30 nm) and bilayer TiO(2)/Al(2)O(3) structures (60 nm/5 nm) is demonstrated.
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spelling pubmed-87816562022-01-22 Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors Ryndin, Eugeny Andreeva, Natalia Luchinin, Victor Micromachines (Basel) Article The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made. The results of modeling static current-voltage characteristics and transient processes during bipolar switching and multilevel turning of the conductivity of memristive elements are obtained. A good agreement between the simulation results and the measured current-voltage characteristics of memristors based on TiO(x) films (30 nm) and bilayer TiO(2)/Al(2)O(3) structures (60 nm/5 nm) is demonstrated. MDPI 2022-01-08 /pmc/articles/PMC8781656/ /pubmed/35056262 http://dx.doi.org/10.3390/mi13010098 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Ryndin, Eugeny
Andreeva, Natalia
Luchinin, Victor
Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title_full Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title_fullStr Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title_full_unstemmed Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title_short Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
title_sort compact model for bipolar and multilevel resistive switching in metal-oxide memristors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781656/
https://www.ncbi.nlm.nih.gov/pubmed/35056262
http://dx.doi.org/10.3390/mi13010098
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