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Compact Model for Bipolar and Multilevel Resistive Switching in Metal-Oxide Memristors
The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781656/ https://www.ncbi.nlm.nih.gov/pubmed/35056262 http://dx.doi.org/10.3390/mi13010098 |