Design and Fabrication of a Ka Band RF MEMS Switch with High Capacitance Ratio and Low Actuation Voltage

In this paper a high capacitance ratio and low actuation voltage RF MEMS switch is designed and fabricated for Ka band RF front-ends application. The metal-insulator-metal (MIM) capacitors is employed on a signal line to improve the capacitance ratio, which will not degrade the switch reliability. T...

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Detalles Bibliográficos
Autores principales: Deng, Kun, Yang, Fuxing, Wang, Yucheng, Lai, Chengqi, Han, Ke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781898/
https://www.ncbi.nlm.nih.gov/pubmed/35056203
http://dx.doi.org/10.3390/mi13010037

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8781898/
https://www.ncbi.nlm.nih.gov/pubmed/35056203
http://dx.doi.org/10.3390/mi13010037

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