Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique

Layer-release techniques for producing freestanding III-V epitaxial layers have been actively developed for heterointegration of single-crystalline compound semiconductors with Si platforms. However, for the release of target epitaxial layers from III-V heterostructures, it is required to embed a me...

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Detalles Bibliográficos
Autores principales: Park, Honghwi, Won, Heungsup, Lim, Changhee, Zhang, Yuxuan, Han, Won Seok, Bae, Sung-Bum, Lee, Chang-Ju, Noh, Yeho, Lee, Junyeong, Lee, Jonghyung, Jung, Sunghwan, Choi, Muhan, Lee, Sunghwan, Park, Hongsik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8782454/
https://www.ncbi.nlm.nih.gov/pubmed/35061536
http://dx.doi.org/10.1126/sciadv.abl6406

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8782454/
https://www.ncbi.nlm.nih.gov/pubmed/35061536
http://dx.doi.org/10.1126/sciadv.abl6406

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