Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film

We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO(2) dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V(G)) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endu...

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Detalles Bibliográficos
Autores principales: Peng, Yue, Xiao, Wenwu, Zhang, Guoqing, Han, Genquan, Liu, Yan, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8787020/
https://www.ncbi.nlm.nih.gov/pubmed/35072820
http://dx.doi.org/10.1186/s11671-022-03655-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8787020/
https://www.ncbi.nlm.nih.gov/pubmed/35072820
http://dx.doi.org/10.1186/s11671-022-03655-x

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