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Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
We demonstrate a non-volatile field-effect transistor (NVFET) with a 3-nm amorphous HfO(2) dielectric that can simulate the synaptic functions under the difference and repetition of gate voltage (V(G)) pulses. Under 100 ns write/erase (W/E) pulse, a memory window greater than 0.56 V and cycling endu...
Autores principales: | Peng, Yue, Xiao, Wenwu, Zhang, Guoqing, Han, Genquan, Liu, Yan, Hao, Yue |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8787020/ https://www.ncbi.nlm.nih.gov/pubmed/35072820 http://dx.doi.org/10.1186/s11671-022-03655-x |
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