Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p–n junctions. In the...

Descripción completa

Detalles Bibliográficos
Autores principales: Narita, Tetsuo, Kanechika, Masakazu, Kojima, Jun, Watanabe, Hiroki, Kondo, Takeshi, Uesugi, Tsutomu, Yamaguchi, Satoshi, Kimoto, Yasuji, Tomita, Kazuyoshi, Nagasato, Yoshitaka, Ikeda, Satoshi, Kosaki, Masayoshi, Oka, Tohru, Suda, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8795273/
https://www.ncbi.nlm.nih.gov/pubmed/35087156
http://dx.doi.org/10.1038/s41598-022-05416-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8795273/
https://www.ncbi.nlm.nih.gov/pubmed/35087156
http://dx.doi.org/10.1038/s41598-022-05416-3

Ejemplares similares