Cargando…
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p–n junctions. In the...
Autores principales: | , , , , , , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8795273/ https://www.ncbi.nlm.nih.gov/pubmed/35087156 http://dx.doi.org/10.1038/s41598-022-05416-3 |
_version_ | 1784641025952710656 |
---|---|
author | Narita, Tetsuo Kanechika, Masakazu Kojima, Jun Watanabe, Hiroki Kondo, Takeshi Uesugi, Tsutomu Yamaguchi, Satoshi Kimoto, Yasuji Tomita, Kazuyoshi Nagasato, Yoshitaka Ikeda, Satoshi Kosaki, Masayoshi Oka, Tohru Suda, Jun |
author_facet | Narita, Tetsuo Kanechika, Masakazu Kojima, Jun Watanabe, Hiroki Kondo, Takeshi Uesugi, Tsutomu Yamaguchi, Satoshi Kimoto, Yasuji Tomita, Kazuyoshi Nagasato, Yoshitaka Ikeda, Satoshi Kosaki, Masayoshi Oka, Tohru Suda, Jun |
author_sort | Narita, Tetsuo |
collection | PubMed |
description | Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p–n junctions. In the present study, we identified the type of threading dislocations that provide pathways for this reverse leakage current. GaN p–n diodes were grown by metalorganic vapor phase epitaxy on freestanding GaN(0001) substrates with threading dislocation densities of approximately 3 × 10(5) cm(−2). These diodes exhibited a breakdown voltage on the order of 200 V and avalanche capability. The leakage current in some diodes in response to a reverse bias was found to rapidly increase with continuous forward current injection, and leakage sites were identified by optical emission microscopy. Closed-core threading screw dislocations (TSDs) were found at five emission spots based on cross-sectional transmission electron microscopy analyses using two-beam diffraction conditions. The Burgers vectors of these dislocations were identified as [0001] using large-angle convergent-beam electron diffraction. Thus, TSDs for which b = 1c are believed to provide current leakage paths in response to forward current stress. |
format | Online Article Text |
id | pubmed-8795273 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-87952732022-01-28 Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress Narita, Tetsuo Kanechika, Masakazu Kojima, Jun Watanabe, Hiroki Kondo, Takeshi Uesugi, Tsutomu Yamaguchi, Satoshi Kimoto, Yasuji Tomita, Kazuyoshi Nagasato, Yoshitaka Ikeda, Satoshi Kosaki, Masayoshi Oka, Tohru Suda, Jun Sci Rep Article Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying continuous forward current stress to GaN p–n junctions. In the present study, we identified the type of threading dislocations that provide pathways for this reverse leakage current. GaN p–n diodes were grown by metalorganic vapor phase epitaxy on freestanding GaN(0001) substrates with threading dislocation densities of approximately 3 × 10(5) cm(−2). These diodes exhibited a breakdown voltage on the order of 200 V and avalanche capability. The leakage current in some diodes in response to a reverse bias was found to rapidly increase with continuous forward current injection, and leakage sites were identified by optical emission microscopy. Closed-core threading screw dislocations (TSDs) were found at five emission spots based on cross-sectional transmission electron microscopy analyses using two-beam diffraction conditions. The Burgers vectors of these dislocations were identified as [0001] using large-angle convergent-beam electron diffraction. Thus, TSDs for which b = 1c are believed to provide current leakage paths in response to forward current stress. Nature Publishing Group UK 2022-01-27 /pmc/articles/PMC8795273/ /pubmed/35087156 http://dx.doi.org/10.1038/s41598-022-05416-3 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Narita, Tetsuo Kanechika, Masakazu Kojima, Jun Watanabe, Hiroki Kondo, Takeshi Uesugi, Tsutomu Yamaguchi, Satoshi Kimoto, Yasuji Tomita, Kazuyoshi Nagasato, Yoshitaka Ikeda, Satoshi Kosaki, Masayoshi Oka, Tohru Suda, Jun Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title | Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title_full | Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title_fullStr | Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title_full_unstemmed | Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title_short | Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress |
title_sort | identification of type of threading dislocation causing reverse leakage in gan p–n junctions after continuous forward current stress |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8795273/ https://www.ncbi.nlm.nih.gov/pubmed/35087156 http://dx.doi.org/10.1038/s41598-022-05416-3 |
work_keys_str_mv | AT naritatetsuo identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT kanechikamasakazu identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT kojimajun identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT watanabehiroki identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT kondotakeshi identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT uesugitsutomu identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT yamaguchisatoshi identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT kimotoyasuji identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT tomitakazuyoshi identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT nagasatoyoshitaka identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT ikedasatoshi identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT kosakimasayoshi identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT okatohru identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress AT sudajun identificationoftypeofthreadingdislocationcausingreverseleakageinganpnjunctionsaftercontinuousforwardcurrentstress |