GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Large-scale patterning for vapor–liquid–solid growth of III–V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exp...

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Detalles Bibliográficos
Autores principales: Güniat, Lucas, Ghisalberti, Lea, Wang, Li, Dais, Christian, Morgan, Nicholas, Dede, Didem, Kim, Wonjong, Balgarkashi, Akshay, Leran, Jean-Baptiste, Minamisawa, Renato, Solak, Harun, Carter, Craig, Fontcuberta i Morral, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8802830/
https://www.ncbi.nlm.nih.gov/pubmed/35040457
http://dx.doi.org/10.1039/d1nh00553g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8802830/
https://www.ncbi.nlm.nih.gov/pubmed/35040457
http://dx.doi.org/10.1039/d1nh00553g

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