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GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays
Large-scale patterning for vapor–liquid–solid growth of III–V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exp...
| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8802830/ https://www.ncbi.nlm.nih.gov/pubmed/35040457 http://dx.doi.org/10.1039/d1nh00553g |