Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties

Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors w...

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Detalles Bibliográficos
Autores principales: Chen, Lipin, Léger, Yoan, Loget, Gabriel, Piriyev, Mekan, Jadli, Imen, Tricot, Sylvain, Rohel, Tony, Bernard, Rozenn, Beck, Alexandre, Le Pouliquen, Julie, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Fabre, Bruno, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Cornet, Charles
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8805590/
https://www.ncbi.nlm.nih.gov/pubmed/34766476
http://dx.doi.org/10.1002/advs.202101661

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8805590/
https://www.ncbi.nlm.nih.gov/pubmed/34766476
http://dx.doi.org/10.1002/advs.202101661

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