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Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties
Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors w...
Autores principales: | , , , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8805590/ https://www.ncbi.nlm.nih.gov/pubmed/34766476 http://dx.doi.org/10.1002/advs.202101661 |
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author | Chen, Lipin Léger, Yoan Loget, Gabriel Piriyev, Mekan Jadli, Imen Tricot, Sylvain Rohel, Tony Bernard, Rozenn Beck, Alexandre Le Pouliquen, Julie Turban, Pascal Schieffer, Philippe Levallois, Christophe Fabre, Bruno Pedesseau, Laurent Even, Jacky Bertru, Nicolas Cornet, Charles |
author_facet | Chen, Lipin Léger, Yoan Loget, Gabriel Piriyev, Mekan Jadli, Imen Tricot, Sylvain Rohel, Tony Bernard, Rozenn Beck, Alexandre Le Pouliquen, Julie Turban, Pascal Schieffer, Philippe Levallois, Christophe Fabre, Bruno Pedesseau, Laurent Even, Jacky Bertru, Nicolas Cornet, Charles |
author_sort | Chen, Lipin |
collection | PubMed |
description | Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors with 2D topological semi‐metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first‐principle calculations, it is shown that the bi‐domain III–V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo‐generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection. Besides, the original topological properties of the 2D semi‐metallic inclusions are also discussed. This comb‐like heterostructure not only merges the superior optical properties of semiconductors with good transport properties of metallic materials, but also combines the high efficiency and tunability afforded by III–V inorganic bulk materials with the flexible management of nano‐scale charge carriers usually offered by blends of organic materials. Physical properties of these novel hybrid heterostructures can be of great interest for energy harvesting, photonic, electronic or computing devices. |
format | Online Article Text |
id | pubmed-8805590 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-88055902022-02-04 Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties Chen, Lipin Léger, Yoan Loget, Gabriel Piriyev, Mekan Jadli, Imen Tricot, Sylvain Rohel, Tony Bernard, Rozenn Beck, Alexandre Le Pouliquen, Julie Turban, Pascal Schieffer, Philippe Levallois, Christophe Fabre, Bruno Pedesseau, Laurent Even, Jacky Bertru, Nicolas Cornet, Charles Adv Sci (Weinh) Research Articles Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors with 2D topological semi‐metallic vertical inclusions, endowed with ambipolar properties. By combining structural, transport, and photoelectrochemical characterizations with first‐principle calculations, it is shown that the bi‐domain III–V/Si materials are able within the same layer to absorb light efficiently, separate laterally the photo‐generated carriers, transfer them to semimetal singularities, and ease extraction of both electrons and holes vertically, leading to efficient carrier collection. Besides, the original topological properties of the 2D semi‐metallic inclusions are also discussed. This comb‐like heterostructure not only merges the superior optical properties of semiconductors with good transport properties of metallic materials, but also combines the high efficiency and tunability afforded by III–V inorganic bulk materials with the flexible management of nano‐scale charge carriers usually offered by blends of organic materials. Physical properties of these novel hybrid heterostructures can be of great interest for energy harvesting, photonic, electronic or computing devices. John Wiley and Sons Inc. 2021-11-11 /pmc/articles/PMC8805590/ /pubmed/34766476 http://dx.doi.org/10.1002/advs.202101661 Text en © 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Chen, Lipin Léger, Yoan Loget, Gabriel Piriyev, Mekan Jadli, Imen Tricot, Sylvain Rohel, Tony Bernard, Rozenn Beck, Alexandre Le Pouliquen, Julie Turban, Pascal Schieffer, Philippe Levallois, Christophe Fabre, Bruno Pedesseau, Laurent Even, Jacky Bertru, Nicolas Cornet, Charles Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title | Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title_full | Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title_fullStr | Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title_full_unstemmed | Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title_short | Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties |
title_sort | epitaxial iii–v/si vertical heterostructures with hybrid 2d‐semimetal/semiconductor ambipolar and photoactive properties |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8805590/ https://www.ncbi.nlm.nih.gov/pubmed/34766476 http://dx.doi.org/10.1002/advs.202101661 |
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