Cargando…
Epitaxial III–V/Si Vertical Heterostructures with Hybrid 2D‐Semimetal/Semiconductor Ambipolar and Photoactive Properties
Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structures, composed of bulk photo‐active semiconductors w...
Autores principales: | Chen, Lipin, Léger, Yoan, Loget, Gabriel, Piriyev, Mekan, Jadli, Imen, Tricot, Sylvain, Rohel, Tony, Bernard, Rozenn, Beck, Alexandre, Le Pouliquen, Julie, Turban, Pascal, Schieffer, Philippe, Levallois, Christophe, Fabre, Bruno, Pedesseau, Laurent, Even, Jacky, Bertru, Nicolas, Cornet, Charles |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8805590/ https://www.ncbi.nlm.nih.gov/pubmed/34766476 http://dx.doi.org/10.1002/advs.202101661 |
Ejemplares similares
-
Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
por: Robert, Cedric, et al.
Publicado: (2012) -
Persistent Ambipolar Heptacenes and Their Redox Species
por: Zeitter, Nico, et al.
Publicado: (2022) -
Ambipolar solution-processed hybrid perovskite phototransistors
por: Li, Feng, et al.
Publicado: (2015) -
Ambipolar ferromagnetism by electrostatic doping of a manganite
por: Zheng, L. M., et al.
Publicado: (2018) -
Highly
Oriented Atomically Thin Ambipolar MoSe(2) Grown by Molecular
Beam Epitaxy
por: Chen, Ming-Wei, et al.
Publicado: (2017)