Trap-state mapping to model GaN transistors dynamic performance

Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identification of the related traps is challenging, especially in presence of non-ideal defects. In this paper, we propose a novel methodology (trap-state mapping) to extract trap parameters, based on the ma...

Descripción completa

Detalles Bibliográficos
Autores principales: Modolo, Nicola, De Santi, Carlo, Minetto, Andrea, Sayadi, Luca, Prechtl, Gerhard, Meneghesso, Gaudenzio, Zanoni, Enrico, Meneghini, Matteo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8810804/
https://www.ncbi.nlm.nih.gov/pubmed/35110655
http://dx.doi.org/10.1038/s41598-022-05830-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8810804/
https://www.ncbi.nlm.nih.gov/pubmed/35110655
http://dx.doi.org/10.1038/s41598-022-05830-7

Ejemplares similares