Cargando…
Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon
High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advanta...
Autores principales: | Hnida-Gut, Katarzyna E., Sousa, Marilyne, Hopstaken, Marinus, Reidt, Steffen, Moselund, Kirsten, Schmid, Heinz |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Frontiers Media S.A.
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8811445/ https://www.ncbi.nlm.nih.gov/pubmed/35127653 http://dx.doi.org/10.3389/fchem.2021.810256 |
Ejemplares similares
-
Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
por: Hnida-Gut, Katarzyna E., et al.
Publicado: (2023) -
Room-Temperature
Lasing from Monolithically Integrated GaAs Microdisks on Silicon
por: Wirths, Stephan, et al.
Publicado: (2018) -
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
por: Menon, Heera, et al.
Publicado: (2023) -
Waveguide coupled III-V photodiodes monolithically integrated on Si
por: Wen, Pengyan, et al.
Publicado: (2022) -
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
por: Convertino, Clarissa, et al.
Publicado: (2018)