Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO(2)/Si(3)N(4) Dual-Layer Insulator

The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO(2)/Si(3)N(4) dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si(3)N(4) single-layer insulator are conducted to the simula...

Descripción completa

Detalles Bibliográficos
Autores principales: Min, So-Ra, Cho, Min-Su, Lee, Sang-Ho, Park, Jin, An, Hee-Dae, Kim, Geon-Uk, Yoon, Young-Jun, Seo, Jae-Hwa, Jang, Jae-Won, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In-Man
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836490/
https://www.ncbi.nlm.nih.gov/pubmed/35160771
http://dx.doi.org/10.3390/ma15030819

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836490/
https://www.ncbi.nlm.nih.gov/pubmed/35160771
http://dx.doi.org/10.3390/ma15030819

Ejemplares similares