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Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO(2)/Si(3)N(4) Dual-Layer Insulator

The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO(2)/Si(3)N(4) dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si(3)N(4) single-layer insulator are conducted to the simula...

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Detalles Bibliográficos
Autores principales:	Min, So-Ra, Cho, Min-Su, Lee, Sang-Ho, Park, Jin, An, Hee-Dae, Kim, Geon-Uk, Yoon, Young-Jun, Seo, Jae-Hwa, Jang, Jae-Won, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In-Man
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836490/ https://www.ncbi.nlm.nih.gov/pubmed/35160771 http://dx.doi.org/10.3390/ma15030819

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