Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects

For decades, Ta/TaN has been the industry standard for a diffusion barrier against Cu in interconnect metallisation. The continuous miniaturisation of transistors and interconnects into the nanoscale are pushing conventional materials to their physical limits and creating the need to replace them. B...

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Detalles Bibliográficos
Autores principales: Santos, Rúben F., Oliveira, Bruno M. C., Savaris, Liliane C. G., Ferreira, Paulo J., Vieira, Manuel F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836562/
https://www.ncbi.nlm.nih.gov/pubmed/35163817
http://dx.doi.org/10.3390/ijms23031891

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836562/
https://www.ncbi.nlm.nih.gov/pubmed/35163817
http://dx.doi.org/10.3390/ijms23031891

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