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Seedless Cu Electroplating on Ru-W Thin Films for Metallisation of Advanced Interconnects
For decades, Ta/TaN has been the industry standard for a diffusion barrier against Cu in interconnect metallisation. The continuous miniaturisation of transistors and interconnects into the nanoscale are pushing conventional materials to their physical limits and creating the need to replace them. B...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836562/ https://www.ncbi.nlm.nih.gov/pubmed/35163817 http://dx.doi.org/10.3390/ijms23031891 |