A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN...

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Detalles Bibliográficos
Autores principales: Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836704/
https://www.ncbi.nlm.nih.gov/pubmed/35160649
http://dx.doi.org/10.3390/ma15030703

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836704/
https://www.ncbi.nlm.nih.gov/pubmed/35160649
http://dx.doi.org/10.3390/ma15030703

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