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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836704/ https://www.ncbi.nlm.nih.gov/pubmed/35160649 http://dx.doi.org/10.3390/ma15030703 |
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author | Weng, You-Chen Lin, Yueh-Chin Hsu, Heng-Tung Kao, Min-Lu Huang, Hsuan-Yao Ueda, Daisuke Ha, Minh-Thien-Huu Yang, Chih-Yi Maa, Jer-Shen Chang, Edward-Yi Dee, Chang-Fu |
author_facet | Weng, You-Chen Lin, Yueh-Chin Hsu, Heng-Tung Kao, Min-Lu Huang, Hsuan-Yao Ueda, Daisuke Ha, Minh-Thien-Huu Yang, Chih-Yi Maa, Jer-Shen Chang, Edward-Yi Dee, Chang-Fu |
author_sort | Weng, You-Chen |
collection | PubMed |
description | An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a P(out) of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications. |
format | Online Article Text |
id | pubmed-8836704 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-88367042022-02-12 A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer Weng, You-Chen Lin, Yueh-Chin Hsu, Heng-Tung Kao, Min-Lu Huang, Hsuan-Yao Ueda, Daisuke Ha, Minh-Thien-Huu Yang, Chih-Yi Maa, Jer-Shen Chang, Edward-Yi Dee, Chang-Fu Materials (Basel) Article An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave applications. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a P(out) of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications. MDPI 2022-01-18 /pmc/articles/PMC8836704/ /pubmed/35160649 http://dx.doi.org/10.3390/ma15030703 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Weng, You-Chen Lin, Yueh-Chin Hsu, Heng-Tung Kao, Min-Lu Huang, Hsuan-Yao Ueda, Daisuke Ha, Minh-Thien-Huu Yang, Chih-Yi Maa, Jer-Shen Chang, Edward-Yi Dee, Chang-Fu A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title | A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title_full | A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title_fullStr | A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title_full_unstemmed | A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title_short | A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer |
title_sort | novel gan:c millimeter-wave hemt with algan electron-blocking layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836704/ https://www.ncbi.nlm.nih.gov/pubmed/35160649 http://dx.doi.org/10.3390/ma15030703 |
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