Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the p...

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Detalles Bibliográficos
Autores principales: Lo Nigro, Raffaella, Fiorenza, Patrick, Greco, Giuseppe, Schilirò, Emanuela, Roccaforte, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836874/
https://www.ncbi.nlm.nih.gov/pubmed/35160775
http://dx.doi.org/10.3390/ma15030830

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8836874/
https://www.ncbi.nlm.nih.gov/pubmed/35160775
http://dx.doi.org/10.3390/ma15030830

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